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| SG35N12T, SG35N12DT Discrete IGBTs Dimensions TO-247AD Dim. A B Millimeter Min. Max. 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.4 1.65 1.0 10.8 4.7 0.4 1.5 5.49 6.2 2.13 4.5 1.4 11.0 5.3 0.8 2.49 Inches Min. Max. 0.780 0.819 0.610 0.140 0.170 0.212 0.065 0.040 0.426 0.185 0.016 0.087 0.800 0.845 0.640 0.144 0.216 0.244 0.084 0.177 0.055 0.433 0.209 0.031 0.102 C(TAB) E C G G=Gate, C=Collector, E=Emitter,TAB=Collector C D E F G H J K L M N SG35N12T SG35N12DT Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA o o Test Conditions TJ=25 C to 150 C TJ=25oC to 150oC; RGE=1 M ; Continuous Transient TC=25oC TC=90oC TC=25oC, 1 ms Maximum Ratings 1200 1200 20 30 70 35 140 ICM=90 @ 0.8 VCES 300 -55...+150 150 -55...+150 Unit V V A A W o VGE=15V; TVJ=125oC; RG=47 (RBSOA) Clamped inductive load PC TC=25oC TJ TJM Tstg Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10s Maximum Tab temperature for soldering SMD devices for 10s Md Weight Mounting torque (M3) C 300 260 1.13/10 6 o C C o Nm/Ib.in. g (TJ=25oC, unless otherwise specified) Symbol BVCES VGE(th) ICES IGES VCE(sat) IC=1mA; VGE=0V IC=750uA; VCE=VGE VCE=VCES; VGE=0V; TJ=25 C TJ=125 C o o o Test Conditions Characteristic Values min. 1200 2.5 5.0 250 5 100 2.7 3.3 typ. max. Unit V V uA mA nA V VCE=0V; VGE=20V IC=IC90; VGE=15V; TJ=125 C SG35N12T, SG35N12DT Discrete IGBTs (TJ=25oC, unless otherwise specified) Symbol Test Conditions Characteristic Values min. gts IC=IC90; VCE=10V Pulse test, t Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK 0.25 Inductive load, TJ=25 C IC=IC90; VGE=15V; VCE=0.8VCES'; RG=Roff=5 Remarks:Switching times may increase for VCE(Clamp) 0.8VCES' higher TJ or increased RG Inductive load, TJ=125 C IC=IC90; VGE=15V; VCE=0.8VCES'; RG=Roff=5 Remarks:Switching times may increase for VCE(Clamp) increased RG 0.8VCES' higher TJ or o o Unit typ. 40 max. S 30 2% 300us, duty cycle 4620 VCE=25V; VGE=0V; f=1MHz 260 90 170 IC=IC90; VGE=15V; VCE=0.5VCES 28 57 50 27 180 160 3.8 55 31 2.6 300 360 8.0 0.42 280 320 7.3 ns ns ns ns mJ ns ns mJ ns ns mJ K/W K/W nC pF Reverse Diode (FRED) Symbol Test Conditions o (TJ=25oC, unless otherwise specified) Characteristic Values min. typ. max. 2.2 2.55 16 40 18 60 0.9 A ns K/W V Unit VF IF=30A; TVJ=150 C TVJ=25 C o IRM trr RthJC VR=540V; IF=30A; -diF/dt=240A/us L 0.05uH; TVJ=100oC IF=1A; -di/dt=100A/us; VR=30V; TVJ=25oC |
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